Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D139-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 |
filingDate |
2011-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_713e85579ed1e28b09cc209584cab9aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccd40bc3530c30e0cb023b3a760a6e30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a2cf3f9243b10468d4363d9faa4776a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88aa49faad4cf70318f887946d799b49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b12a60fc01802a82206c0e866c00e3b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3236c4a2ef2062cd31a2234452a6019 |
publicationDate |
2013-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-2650729-A1 |
titleOfInvention |
Composition for forming resist underlayer film containing hydroxyl group-containing carbazole novolac resin |
abstract |
There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of of 3 to 97:97 to 3 in molar ratio:n n nA method for producing a semiconductor device, comprising the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film by irradiation of light or electron beams and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/ES-2523948-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2937391-A4 |
priorityDate |
2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |