| abstract |
Detectors based on such Ge(Sn) alloys of the formula Ge 1-x Sn x (e.g., 0 < x < 0.01) have increased responsivity while keeping alloy scattering to a minimum. Such small amounts of Sn are also useful for improving the performance of the recently demonstrated Ge-on-Si laser structures, since the addition of Sn monotonically reduces the separation between the direct and indirect minima in the conduction band of Ge. Thus, provided herein are Ge(Sn) alloys of the formula Ge 1x Sn x , wherein x is less than 0.01, wherein the alloy is optionally n-doped or p-doped; and assemblies and photodiodes comprising the same, and methods for their formation. |