| abstract |
In a power semiconductor module applied to a three-level power conversion apparatus for a railroad vehicle, switching elements 1 to 4 and clamp diodes 5 and 6 are respectively formed of a wide bandgap semiconductor, the switching element 1, the clamp diode 5, and the switching element 2 are arranged tandemly in this order on one side of an element substrate 82 along a flow direction of cooling air, the switching element 4, the clamp diode 6, and the switching element 3 are arranged tandemly in this order on the other side of the element substrate 82 along the flow direction of the cooling air, a temperature sensor 86A for external elements is arranged on an edge side of the element substrate 82 in a near-field region around the switching elements 1 and 4, a temperature sensor 86B for internal elements is arranged on an edge side of the element substrate 82 in a near-field region around the switching elements 2 and 3, and the switching elements 1 to 4, the clamp diodes 5 and 6, the temperature sensor 86A for external elements, and the temperature sensor 86B for internal elements are accommodated in one module. |