http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2608281-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60 |
classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-64 |
filingDate | 2011-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa595981f2461ebf301aef66b9e71232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34ea06f2cd763f0eef428dbb6264ae1b |
publicationDate | 2013-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-2608281-A1 |
titleOfInvention | Light-emitting diode and light-emitting diode lamp |
abstract | The present invention relates to a light-emitting diode which has an emission wavelength of 655 nm or more, excellent monochromatic properties, high output, high luminance, high efficiency and fast response time, has such a characteristic that the intensity of light emitted from a light extraction surface and traveling in a direction perpendicular to the light extraction surface has high directivity, and can release heat to the outside with high efficiency; and a light-emitting diode lamp. The light-emitting diode includes a compound semiconductor layer (11) which includes at least a pn-junction-type light-emitting section (3) and a strain adjustment layer (13) laminated on the light-emitting section (3); wherein the light-emitting section (3) has a laminated structure composed of a strained light-emitting layer having a composition formula (Al X Ga 1-X ) Y In 1-Y P (0¤X¤0.1, 0.37¤Y¤0.46) and a barrier layer, wherein the strain adjustment layer (13) can be penetrated by light from the light-emitting section (3) and has a smaller lattice constant than those of the strained light-emitting layer and the barrier layer; and wherein a functional substrate (5) is bonded to a surface (11b) of the compound semiconductor layer (11) which is located on the opposite side with respect to the light extraction surface (11a) through a reflective structure (4). |
priorityDate | 2010-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.