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filingDate 2011-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa595981f2461ebf301aef66b9e71232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34ea06f2cd763f0eef428dbb6264ae1b
publicationDate 2013-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2608281-A1
titleOfInvention Light-emitting diode and light-emitting diode lamp
abstract The present invention relates to a light-emitting diode which has an emission wavelength of 655 nm or more, excellent monochromatic properties, high output, high luminance, high efficiency and fast response time, has such a characteristic that the intensity of light emitted from a light extraction surface and traveling in a direction perpendicular to the light extraction surface has high directivity, and can release heat to the outside with high efficiency; and a light-emitting diode lamp. The light-emitting diode includes a compound semiconductor layer (11) which includes at least a pn-junction-type light-emitting section (3) and a strain adjustment layer (13) laminated on the light-emitting section (3); wherein the light-emitting section (3) has a laminated structure composed of a strained light-emitting layer having a composition formula (Al X Ga 1-X ) Y In 1-Y P (0‰¤X‰¤0.1, 0.37‰¤Y‰¤0.46) and a barrier layer, wherein the strain adjustment layer (13) can be penetrated by light from the light-emitting section (3) and has a smaller lattice constant than those of the strained light-emitting layer and the barrier layer; and wherein a functional substrate (5) is bonded to a surface (11b) of the compound semiconductor layer (11) which is located on the opposite side with respect to the light extraction surface (11a) through a reflective structure (4).
priorityDate 2010-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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