http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2602818-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_282d1acee402da62eebf777d8e01cd1d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-147 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02372 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-167 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0814 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-14 |
| filingDate | 2011-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f0373335248817c27b971645e8cc0b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ffa2c5ac1b101dc52a0576684b4179a |
| publicationDate | 2013-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2602818-A1 |
| titleOfInvention | An interposer device |
| abstract | The invention relates to an interposer device comprising a doped silicon substrate (1) having an epitaxial layer (24) on a first side and two through vias (11, 12) extending from the first side to a second side opposite to the first side of the doped silicon substrate. Each through via comprises a volume of doped silicon substrate delimited by a surrounding trench (7) extending from the first to the second side of the doped silicon substrate such that said surrounding trench is arranged so as to electrically isolate the doped silicon substrate surrounded by said trench. First and second conductive layers (121, 122) are laid respectively on first and second sides of the first through via so as to be electrically connected together and third and fourth conductive layers (112, 111) are laid respectively on surfaces of the second through via so as to be electrically connected together. The first (122) and third (112) conductive layers are connected together by means of a back-to-back diode (35) wherein the diodes are isolated by a diode trench (6) having a depth at least equal to that of the epitaxial layer (24). n A method of forming the interposer device is also provided. |
| priorityDate | 2011-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.