| abstract |
A method of producing a structure having an active portion having at least two layers from a first monocrystalline silicon substrate, said method comprising the steps of:na) producing at least one porous silicon zone in the first substrate,nb) performing an epitaxial growth deposition of a monocrystalline silicon layer over the entire surface of the first substrate and on the surface of the porous silicon zone,nc) machining the monocrystalline layer obtained by epitaxy at the pure porous silicon zone to form a first suspended zone,nd) removal or oxidation of the porous silicon,ne) depositing a selective sacrificial layer with respect to silicon,nf) machining the first substrate,ng) release of the suspended zones by removal of the sacrificial layer. |