| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 |
| filingDate |
2011-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b521bb939ec938999b64a68426460e9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fa0fb83d8f461414f80f80d0054c8bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0c138a78f2033b0da139a4ed2704110
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97cf5f5b970495ec2740b4829eefdff3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e53fd8980f66ae90bf15b9e82a51f59e |
| publicationDate |
2013-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2581929-A1 |
| titleOfInvention |
Epitaxial substrate and method for producing epitaxial substrate |
| abstract |
Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. An epitaxial substrate in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a substrate surface, is formed so as to include: a buffer layer formed of a plurality of lamination units being continuously laminated; and a crystal layer formed on the buffer layer. The lamination unit includes: a composition modulation layer formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated such that a compressive strain exists therein; a termination layer formed on an uppermost portion of the composition modulation layer, the termination layer acting to maintain the compressive strain existing in the composition modulation layer; and a strain reinforcing layer formed on the termination layer, the strain reinforcing layer acting to enhance the compressive strain existing in the composition modulation layer. |
| priorityDate |
2010-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |