http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2579386-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M14-00 |
| filingDate | 2011-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98e6a59c7bd6f23275acd05094dddfff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99efdee246c323dfc25c6b4f4703c580 |
| publicationDate | 2013-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2579386-A1 |
| titleOfInvention | Photoelectric conversion device and method for manufacturing same |
| abstract | To provide a photoelectric conversion device having high conversion efficiency and a method for manufacturing the same. The photoelectric conversion device includes a working electrode that has a transparent electrode (2) and a porous metal oxide semiconductor layer (3) that is formed on a surface of the transparent electrode (2) and supported with a dye; a counter electrode (5); and an electrolyte layer (4), the hydroxyl group concentration on the surface of the oxide semiconductor layer is 0.01 groups/(nm) 2 or more and 4.0 groups/(nm) 2 or less, and the adsorbed water concentration on the surface thereof is 0.03 pieces/(nm) 2 or more and 4.0 pieces/(nm) 2 or less. The method for manufacturing a photoelectric conversion device includes a first step of forming a porous metal oxide semiconductor layer (3) on a surface of a transparent electrode (2), a second step of controlling the hydroxyl group concentration on the surface of the oxide semiconductor layer to be 0.01 groups/(nm) 2 or more and 4.0 groups/(nm) 2 or less and the adsorbed water concentration on the surface to be 0.03 pieces/nm 2 or more and 4.0 pieces/(nm) 2 or less by low temperature plasma processing under an oxidizing atmosphere, and a third step of supporting a dye in the oxide semiconductor layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9276147-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490386-B2 |
| priorityDate | 2010-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 106.