| abstract |
An insulation pattern-forming method and an insulation pattern-forming material for a damascene process can conveniently form a multilayer structure without requiring a complex etching step and the like. The insulation pattern-forming method includes (I) forming an organic pattern on a substrate, (II) filling a space defined by the organic pattern with an insulating material, (III) removing the organic pattern to obtain an inverted pattern formed of the insulating material, and (IV) curing the inverted pattern. |