http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2573820-A2

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0326
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-072
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032
filingDate 2012-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1111fa456ba7bf9153d0ab11d4df59a
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publicationDate 2013-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2573820-A2
titleOfInvention Photovoltaic device including a CZTS absorber layer and method of manufacturing the same
abstract A photovoltaic device (100, 200, 400) including a CZTS absorber layer (130, 230, 430) and method for manufacturing the same are disclosed. The photovoltaic device (100, 200, 400) includes a substrate (110, 210, 410), a bottom electrode layer (120, 220, 420), an absorber layer (130, 230, 430) formed on the bottom electrode layer (120, 220, 420), a buffer layer (140, 240, 440) formed on the absorber layer (130, 230, 430) and a top electrode layer (150, 250, 450) formed on the buffer layer (140, 240, 440). The absorber layer (130, 230, 430) includes a first region (231) adjacent to the bottom electrode layer (120, 220, 420) and a second region (232) adjacent to the first region (231). Both of the first region (231) and the second region (232) include a formula of Cu a (Zn 1-b Sn b )(Se 1-c S c ) 2 , wherein 0<a<1, 0<b<1, 0≦c≦1 and a Zn/Sn ratio of the first region (231) is higher than that of the second region (232).
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2784828-A4
priorityDate 2011-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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