| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9a255559e1d94f20510a17a673b1078 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B9-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B9-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B9-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40 |
| filingDate |
2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d59938c39edfb929b3d4e4bd873f6a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_656f4ffa4bf73d231deb4ec31bf28740
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6938ddee38674ee7497413dbbba3b68a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76b0082d2bb49e9479c931b5d91a3ed1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36cc6443e5ab019517817eda8da74e42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfef8dd407900caf6537f86e493a6a7d |
| publicationDate |
2013-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2570521-A2 |
| titleOfInvention |
Manufacturing method of group 13 nitride crystal |
| abstract |
A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length "L" in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length "L" to a crystal diameter "d" in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2708622-A3 |
| priorityDate |
2011-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |