| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e0bf0928b608797b70bbc2b91c7e52e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2011-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ee5b8569dd2e22438b2897404692b0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb88b28cfd3a1bafb9700671a2d52157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a94e945a56a29bb7ae1a3d2d89e0ae42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29c2885eae3a0130ed07b6be5b69c474 |
| publicationDate |
2013-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2554612-A1 |
| titleOfInvention |
A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5 |
| abstract |
A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si 1-x Ge x material with 0.1 ≤ x < 1 in the presence of a chemical mechanical polishing (CMP) composition having a pH value in the range of from 3.0 to 5.5 and comprising: n(A) inorganic particles, organic particles, or a mixture or composite thereof, n(B) at least one type of an oxidizing agent, and n(C) an aqueous medium. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014195167-A1 |
| priorityDate |
2011-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |