| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_edc7ad06ab91150c5556ccaa5b0a5185 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12 |
| filingDate |
2010-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c481424ef082484d101c3e503c0c19f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b6251e03193e0b94b5b120931e39ae1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d607072aaae6342b2938573809fafa0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9d4ed5b8747559169e8730032604640
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_160149e0aaaa2c20c506d8e7f6141728 |
| publicationDate |
2013-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2553145-A1 |
| titleOfInvention |
Etch resistant alumina based coatings |
| abstract |
Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminium oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate. |
| priorityDate |
2010-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |