Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F1-3247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7782 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7789 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2010-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db47a1d6e1a4e4d7a401d984dffeafc2 |
publicationDate |
2013-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-2549528-A1 |
titleOfInvention |
Compound semiconductor device and manufacturing method for same |
abstract |
A first GaN layer (2), a first AlGaN layer (3), a second GaN layer (4) and a third GaN layer (5) are formed in layers on a substrate (1). A second AlGaN layer (6) is formed on the sidewall of an opening (10A) formed in the multilayer structure. A gate electrode (8) is formed to fill an electrode trench (7a) in an insulating film (7). A portion (7c) of the insulating film (7) between the gate electrode (8) and the second AlGaN layer (6) functions as a gate insulating film. A source electrode (11) is formed above the gate electrode (8) and a drain electrode (12) is formed below the gate electrode (8). This configuration enables implementation of a miniatuarizable, reliable vertical HEMT that has a sufficiently high withstand voltage and high output power and is capable of a normally-off operation without problems that could otherwise result from the use of a p-type compound semiconductor. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10325997-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9799726-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3022771-A4 |
priorityDate |
2010-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |