http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2515346-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4a8faea375370b67c9d71e67db32bcd |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02601 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 |
| filingDate | 2010-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3c6136fc42d59e76f3cb0f17b627ae2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_390dfd704dab45b7ac3fc116336d1c0c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a465d1cf8579943ae410d54624a45cc6 |
| publicationDate | 2012-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2515346-A1 |
| titleOfInvention | Process for producing semiconductor layer, process for producing photoelectric converter, and solution for forming semiconductor layer |
| abstract | It is an object of the present invention to provide a method for manufacturing a semiconductor layer, a method for manufacturing a photoelectric conversion device, and a semiconductor layer forming solution which are able to easily manufacture a good semiconductor layer having a desired thickness. To accomplish this object, a starting solution containing a metallic element, an organic compound containing a chalcogen element and a Lewis base organic compound is initially produced. Next, heating the starting solution produces fine particles. The fine particles contain a metal chalcogenide which is a compound of the metallic element and a chalcogen element included in the organic compound containing a chalcogen element. A semiconductor layer is formed by using a semiconductor layer forming solution in which the fine particles are dispersed. |
| priorityDate | 2009-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.