| abstract |
A chemical plasma processing gas supply member (30) is provided. The gas supply member comprises a gas supply pipe (32) which is adapted to be inserted into a container held in a plasma processing chamber into which a microwave can be introduced, and to supply a reactive gas for forming a CVD film on an inner surface of the container, wherein the gas supply pipe (32) is sectionalized into two areas, namely an electric field intensity distribution stabilizing area (A), and an end gas induction area (B) which is positioned on an end side with respect to the electric field intensity distribution stabilizing area (A), at least a metal portion (32a) adapted to communicate with a shield wall constituting the plasma processing chamber and which extends from a root portion to a boundary between the electric field intensity distribution stabilizing area (A), and wherein the end gas induction area (B) in an axial direction is formed in the electric field intensity distribution stabilizing area (A), and the end gas induction area (B) is formed of a non-metal material (32b). |