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filingDate 2010-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_274bcaa87b2f76fcbbb3f00d76bfb8f7
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publicationDate 2012-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2487135-A1
titleOfInvention SiOx, AND VAPOR DEPOSITION MATERIAL FOR BARRIER FILM AND NEGATIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM-ION SECONDARY BATTERY EACH USING THE SAME
abstract Provided is SiO x , wherein the amount of generated H 2 O gas detected in a temperature range of 200 to 800°C in a temperature-programmed desorption gas analysis is 680 ppm or less. The amount of the generated H 2 O is desirably 420 ppm or less. In addition, in a graph obtained by X-ray diffraction, the peak intensity P1 at a Si peak point exhibited near 2θ = 28° and the base intensity P2 at a peak point interpolated from the gradient of average intensities in the fore and aft positions near the peak point desirably satisfy (P1-P2)/P2≤0.2. This SiO x is used as a vapor deposition material, whereby the generation of splashing is suppressed in forming a film, and a vapor-deposited film having excellent gas barrier properties can be formed. In addition, this SiO x is used as a negative electrode active material, whereby high initial efficiency of a lithium-ion secondary battery can be maintained.
priorityDate 2009-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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