| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_41ac7ff6ab574ca3737b892da2ebfe6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate |
2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9145fde921b7b89b82a5fac66daa3f87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19769ae168b638789c731d10eec4a04b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43eebcdd32173dcbc2ca4c68fa1db795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d993b1f3b659c183b64bdc2003cd492f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_580e683d408253ad23803fb55bbe5e2e |
| publicationDate |
2012-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2485250-A1 |
| titleOfInvention |
Semiconductor device, and process for production of semiconductor device |
| abstract |
A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4220687-A1 |
| priorityDate |
2009-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |