| abstract |
There is provided a composition for curing a resist underlayer film used as an underlayer of a resist for nanoimprint in nanoimprint lithography of a pattern forming process by heat-baking, light-irradiation or both of them to form the resist underlayer film. A composition for forming a resist underlayer film used for nanoimprint in a pattern forming process using nanoimprint by performing heat-baking, light-irradiation, or both of them, the composition comprising a silicon atom-containing polymerizable compound (A), a polymerization initiator (B) and a solvent (C). The polymerizable compound (A) may contain silicon atoms in a content of 5 to 45% by mass. The polymerizable compound (A) may be a polymerizable compound having at least one cation polymerizable reactive group, a polymerizable compound having at least one radical polymerizable reactive group, or a combination of them, and the polymerization initiator (B) may be a photopolymerization initiator. |