| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d4ada69388e0a1b68daaf536597c732 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate |
2010-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2440cf10efb06941dae27be535bae236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecf5d65c1e69ad7e349536683188b943
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c4c423c8841f57c5d4589c60e4f3190 |
| publicationDate |
2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2457125-A2 |
| titleOfInvention |
Method and materials for reverse patterning |
| abstract |
A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF 4 to "etch back" the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O 2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s). |
| priorityDate |
2009-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |