| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
| filingDate |
2011-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7de27e01bafa6645d2972f13e4f6610b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f06ef7cd9e9a0461097d652e4cb4098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17323325080eacd5af10c289d5b0614b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5d3c673a6444a8de54ab62d4cd4395f |
| publicationDate |
2012-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2423986-A2 |
| titleOfInvention |
Light emitting device |
| abstract |
A light emitting device includes a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; a first ohmic layer and a first electrode provided on the first conductivity type semiconductor layer; and a second electrode provided on the second conductivity type semiconductor layer, wherein a contact area between the first conductivity type semiconductor layer and the first ohmic layer comprises oxygen at 5% or more of an atomic ratio or nitrogen at 50% or more of an atomic ratio. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017085200-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019153672-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10580938-B2 |
| priorityDate |
2010-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |