Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-10 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01F17-235 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1454 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01F17-235 |
filingDate |
2002-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6037d6ddc8e8dfe248464fdd128a88fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01cd19963303720d983c66c36402f1e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c4fc36c286133423961283b05346377 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a40d349f03617619ed73ebcb7fd90686 |
publicationDate |
2012-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-2418258-A1 |
titleOfInvention |
Polishing slurry and method of polishing substrate |
abstract |
polishing slurry and a polishing method which are suitably used in a CMP technique for flattening a surface of a substrate in a production process of a semiconductor device. The polishing slurry comprises particles and a medium in which at least a part of the particles are dispersed, wherein the particles are made of at least one of (1) a cerium compound selected from cerium oxide, cerium halide and cerium sulfide and having a density of 3 to 6 g/cm 3 and an average particle diameter of secondary particles of 1 to 300 nm and (2) a tetravalent metal hydroxide. A polishing method using the polishing slurry takes advantage of a chemical action of particles in the polishing slurry and minimizes a mechanical action of the particles, thereby achieving a decrease in scratches caused by the particles and an increase in polishing rate at the same time. |
priorityDate |
2001-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |