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publicationDate 2012-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2405500-A2
titleOfInvention Semiconducting light emitting device with resonance condition between bottom reflector and active layer
abstract A semiconducting light emitting device is provided. The light emitting device includes: a second conductive semiconductor layer (116); an active layer (114) over the second conductive semiconductor layer; a first conductive semiconductor layer (112) over the active layer; and a second electrode layer (120) including a reflective layer (124) under the second conductive semiconductor layer. The active layer includes a second active layer (114a) that actually emits light on the reflective layer and a first active layer (114v) that does not emit light on the second active layer. A distance between the reflective layer and the second active layer satisfies a constructive interference condition.
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