| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate |
2011-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13836751f81449b1dd224f7375a1d794 |
| publicationDate |
2011-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2398076-A2 |
| titleOfInvention |
Light emitting device, method for fabricating the same, light emitting device package, and lighting system including the same |
| abstract |
A light emitting device is provided. The light emitting device includes a first conductivity type semiconductor layer (50), a second conductivity type semiconductor layer (90), an active layer (70) disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and comprising a plurality of well layers and a plurality of barrier layers, a first nitride semiconductor layer (60) disposed between the first conductivity type semiconductor layer and the active layer, and a second nitride semiconductor layer (80) disposed between the active layer and the second conductivity type semiconductor layer, wherein the first nitride semiconductor layer (60) includes an indium-based semiconductor layer, the first nitride semiconductor layer comprises a plurality of dislocations (21) and indium clusters, and the active layer (70) includes a plurality of pits (71). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9553236-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502611-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023007176-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014166764-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023007174-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014048907-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105006503-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104518062-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107611228-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107611228-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9728674-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104157753-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104518062-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104157753-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475951-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104685644-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2804226-A1 |
| priorityDate |
2010-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |