http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2395544-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022441 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0288 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2010-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d59c05ed4f719025f15a68001ec861b7 |
| publicationDate | 2011-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2395544-A1 |
| titleOfInvention | Semiconductor device producing method and semiconductor device |
| abstract | Disclosed are a semiconductor device producing method and a semiconductor device. The semiconductor device producing method is comprised of a step of forming a diffusion suppressing mask (2) composed of at least two of a thick film portion (2a), an opening portion (2b), and a thin film portion (2c), on a surface of a semiconductor substrate (1); a step of applying dopant diffusing agents (3, 4, 72, 73) containing dopants to the entirety of a surface of the diffusion suppression mask (2); and a step of diffusing the dopants obtained from the dopant diffusing agents (3, 4, 72, 73) onto the surface of the semiconductor substrate (1). In the semiconductor device, a high concentration first conductive dopant diffusion layer (5), a high concentration second conductive dopant diffusion layer (6), a low concentration first conductive dopant diffusion layer (16), and a low concentration second conducive dopant diffusion layer (17) are provided on one of the surfaces of the semiconductor substrate (1). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2652802-A2 |
| priorityDate | 2009-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 121.