| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5508eee65c0b01afc828b6ccf1cc6d07 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2203-06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B19-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-01 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J3-06 |
| filingDate |
2009-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1f5d360f15945c2a2d502b79b4d15fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52cb7f0e91d48bdd6afa8f2bd30c12f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e3876cb917d0f55cdf2f4dc739c88e1 |
| publicationDate |
2011-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2386126-A1 |
| titleOfInvention |
Affecting the thermoelectric figure of merit (zt) by high pressure, high temperature sintering |
| abstract |
A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT. |
| priorityDate |
2009-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |