| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate |
2009-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8547b5de250b0505a4158fc1b9523776 |
| publicationDate |
2011-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2377976-A1 |
| titleOfInvention |
Group iii nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group iii nitride substrate |
| abstract |
A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×10 10 atoms/cm 2 to 200×10 10 atoms/cm 2 of a p-type metal element. The group III nitride substrate has a stable surface. |
| priorityDate |
2009-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |