http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2366658-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7e10c3197b3b95edca8537e71592264d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-095 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00 |
| filingDate | 2010-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48dfb24b7567eecfe25a7298c46dfc85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0267650c9fcb7dfe8fab61ab5fd5351f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d0f4a9451509190bfe13894ffffe803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cf0c031bf6762224fe71b3aaeb468c2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60ecfd336aa38f3234428007391705b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eac4423e2d4eec9b118c3c92de1fd020 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91515fc709f20580d73480badfd0863a |
| publicationDate | 2011-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2366658-A2 |
| titleOfInvention | Electrode structure for a microdevice package |
| abstract | An aspect of the invention provides a high-joining-strength electrode structure, in which a Cu electrode can be thinned and a crack, a void, and peel-off are hardly generated even if the Cu electrode is thinned. A Cu through-interconnection (75) is provided in a through-hole (72) made in a cover substrate (71). In a surface of the cover substrate (71), a Cu electrode (82) is provided in an end portion of the through-interconnection (75). A whole surface of the Cu electrode (82) is covered with a diffusion preventing film (83) that is made of a material such as Ti and Ni in which a diffusion coefficient of Sn is equal to or lower than 3×10 -23 cm 2 /sec. A wettability improving layer (84) made of Au is provided on the diffusion preventing film (83), and a solder layer (85) made of Au-Sn solder is provided on the wettability improving layer (84). |
| priorityDate | 2010-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.