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filingDate 2011-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2011-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2365528-A2
titleOfInvention Two light emitting diodes stacked in an n-p-n arrangement and LED package comprising the same
abstract Disclosed are a light emitting device (100) and a light emitting device package having the same. The light emitting device (100) includes a first semiconductor layer (130) doped with N type dopants, a first active layer (140) on the first semiconductor layer (130), a second semiconductor layer (150) doped with P type dopants on the first active layer (140), a second active layer (160) on the second semiconductor layer (150), and a third semiconductor layer (170) doped with N type dopants on the second active layer (160). A thickness of the second semiconductor layer (150) is in a range of 2000Å to 4000Å, and doping concentration of the P type dopants doped in the second semiconductor layer (150) is in a range of 10 18 cm -3 to 10 21 cm -3 .
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