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filingDate 2010-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cd2228da94fd3567a72d81b63544ea3
publicationDate 2011-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2362425-A1
titleOfInvention A method for forming a selective contact
abstract The present invention is directed to a method for forming a selective contact for a photovoltaic cell comprising: na. forming a doped contact layer at the surface of a semiconductor substrate; nb. annealing a portion of the doped contact layer with a laser beam, said portion having a 2D-pattern corresponding to at least a portion of a respective selective contact grid; n ncharacterized in that the laser beam is pulsed and shaped to the 2D-pattern. n In addition, the present invention is also directed to a photovoltaic cell comprising a selective contact formed by that method.
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priorityDate 2010-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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