http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2355141-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 |
| filingDate | 2011-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32a991c174191f1541ff1faebb104f3b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03b99860aa20ff3061c0ce235940478e |
| publicationDate | 2011-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2355141-A2 |
| titleOfInvention | Semiconductor device, method for producing the semiconductor device, substrate for semiconductor element and method for producing the substrate |
| abstract | [Objectives] n First, a semiconductor device having favorable properties will be produced. Second, the occurrence of cracks in a porous layer formed on the substrate of a semiconductor device will be suppressed, to realize a high performance semiconductor device, even if it has a large area. Third, the adhesion properties of a porous layer formed on a resin substrate will be improved, to suppress separation of the resin substrate and the porous layer. n [Constitution] n A semiconductor device is provided with a porous structure layer (4) formed by silicone resin between a substrate (2) and a semiconductor element (3). Alternatively, a porous layer (24) having a density of 0.7g/cm 3 or less, formed by a compound obtained by hydrolyzing and condensing at least one type of alkoxysilane selected from a group consisting of monoalkoxysilane, dialkoxysilane, and trialkoxysilane, and tetraalkoxysilane is provided between a substrate (22) and a semiconductor element (23) of a semiconductor device (21). As a further alternative, an adhesion layer (33) formed by a compound obtained by hydrolyzing and condensing an alkoxysilane is provided on a resin substrate (32), and a porous layer (34) having a density of 0.7g/cm 3 or less, formed by a compound obtained by hydrolyzing and condensing an alkoxysilane, is provided on the adhesion layer (33). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2738145-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9994481-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9181455-B2 |
| priorityDate | 2010-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 231.