| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee1c19da359446fb5c4f0458a57b783d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate |
2009-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7fe783c5a6630bd8021bd496802a941
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a52c78287772e6465bdc60e7a992b33 |
| publicationDate |
2011-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2352167-A1 |
| titleOfInvention |
Abrasive composition and method for manufacturing semiconductor integrated circuit device |
| abstract |
The present invention relates to a polishing composition used in a step of polishing until a barrier layer adjacent to a copper layer is exposed, in a pattern formation of polishing the copper layer provided on an insulating layer through the barrier layer thereby alternately forming a copper embedded wiring and the insulating layer, the polishing composition including: an alicyclic resin acid; a colloidal silica in which a content thereof in the polishing composition is from 0.1 to 1.5% by mass, an average primary particle size thereof is from 10 to 40 nm, an average secondary particle size thereof is from 30 to 80 nm, and (the average secondary particle size x the content) is in a range of from 10 to 40; and tetramethylammonium ion. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9536737-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2779216-A4 |
| priorityDate |
2008-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |