http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2346095-A3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60480587582bf8e0ca64c6076c0646ab |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-244 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate | 2011-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_893b2a539b1b652df64414550b824a85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4b4924a4ed5d34943cf9efe430b5253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d337b5b90f85d18feecd6d89447be717 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f08151ac403c3b5711db5f20e465fa28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98515172f93b5b036e105e03f9245551 |
| publicationDate | 2011-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-2346095-A3 |
| titleOfInvention | Method of manufacturing a radiation detector |
| abstract | The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. n The detector is a PIN photodiode with a thin layer of pure boron connected to the p + -diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode. n The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer. To that end the grid of aluminium is formed by covering the boron layer completely with a layer of aluminium and then removing part of the layer of aluminium by etching, the etching comprising a first step (304) of dry etching, the step of dry etching defining the grid but leaving a thin layer of aluminium on the part of the boron layer to be exposed, followed by a second step (308) of wet etching, the step of wet etching completely removing the aluminium from the part of the boron layer to be exposed. |
| priorityDate | 2010-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.