| abstract |
A CdTe single crystal, wherein chlorine concentration in the crystal is between 0.1 and 5.0 ppmwt and resistivity at room temperature is not less than 1.0 × 10 9 Ω·cm is obtained by growing the crystal according to one of a vertical gradient freezing method, a horizontal gradient freezing method, a vertical Bridgman method, a horizontal Bridgman method, and a liquid encapsulated Czochralski method by using a CdTe polycrystal, in which 50 to 200 ppmwt of chlorine is doped, as a raw material. |