Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_435f7fafc4b931eae59de228af7272de |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24479 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
filingDate |
2002-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cacdf87a7313e8683a41193a313f4506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e190ec6a60c11d9fd11e0e39402c5fd8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfbc70e29654e646027088ad90bd03e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d09acbadef5f40c4b102067d1f83b77 |
publicationDate |
2011-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-2299504-A1 |
titleOfInvention |
Semiconductor light emitting device comprising uneven substrate |
abstract |
At least one depression (20) and /or projection (21) for scattering or diffracting light generated in a light emitting region (12) is formed in the surface of a substrate (10). The recess and /or projection is so shaped as to generate no crystal defects in semiconductor layers (11, 13) |
priorityDate |
2001-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |