| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
2009-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0961a780151788a390892e748c60d30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5912b757985b4ae5809e5ea81afbe489
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03dd722098c33439466f4776c4433039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9865007265efa49022b77724475047c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7333a4b482cd816cffd1417253b242d1 |
| publicationDate |
2012-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2286469-B1 |
| titleOfInvention |
Semiconductor body and method for producing a semiconductor body |
| abstract |
A semiconductor body (2) comprising an n-conducting semiconductor layer (21) and a p-conducting semiconductor layer (22) is specified. The p-conducting semiconductor layer (22) contains a p-type dopant and the n-conducting semiconductor layer (21) contains an n-type dopant and a further dopant. A method for producing a semiconductor body is furthermore specified. |
| priorityDate |
2008-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |