| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21V29-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2105-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2105-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2113-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2115-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21K9-23 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F21Y105-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F21Y113-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F21K99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
| filingDate |
2010-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0521c9720d41a5399e4013f89bc29c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fc3c769757def294047212680f2b4e1 |
| publicationDate |
2011-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2280431-A2 |
| titleOfInvention |
Light emitting device |
| abstract |
A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive semiconductor layer and the current blocking region; and a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10355174-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017009331-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019215049-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11374152-B2 |
| priorityDate |
2009-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |