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filingDate 2008-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61b12c86ea14d65c74860469f7bee555
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publicationDate 2010-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2213772-A1
titleOfInvention Copper anode or phosphorus-containing copper anode, method for electroplating copper on semiconductor wafer, and semiconductor wafer with particle not significantly deposited thereon
abstract Provided is a copper anode or a phosphorous-containing copper anode for use in performing electroplating copper on a semiconductor wafer, wherein purity of the copper anode or the phosphorous-containing copper anode excluding phosphorous is 99.99wt% or higher, and silicon as an impurity is 10wtppm or less. Additionally provided is an electroplating copper method capable of effectively preventing the adhesion of particles on a plating object, particularly onto a semiconductor wafer during electroplating copper, a phosphorous-containing copper anode for use in such electroplating copper, and a semiconductor wafer comprising a copper layer with low particle adhesion formed by the foregoing copper electroplating.
priorityDate 2007-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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