Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
filingDate |
2009-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ba0aa1310a74629c9da010f2fe36f9f |
publicationDate |
2010-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-2202811-A1 |
titleOfInvention |
Semiconductor light emitting device |
abstract |
A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers (165) including a first conductive semiconductor layer (140), an active layer (150) and a second conductive semiconductor layer (160), and a layer of the plurality of compound semiconductor layers comprising a roughness (180) comprising a sapphire material. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2858128-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2492952-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9543485-B2 |
priorityDate |
2008-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |