| abstract |
A light emitting apparatus (1) including a light emitting element (2) of a gallium nitride based semiconductor and a light converter (3) absorbing a part of primary light emitted from the light emitting element (2) to emit secondary light with a longer wavelength than the primary light, the light converter (3) includes, as a red light emitting phosphor, divalent europium activated nitride red light emitting phosphor substantially represented by (MI 1-a Eu a )MIISiN 3 and includes, as a green or yellow light emitting phosphor, any selected from divalent europium activated oxynitride green light emitting phosphor substantially represented by Eu b Si c Al d O e N f , divalent europium activated oxynitride yellow light emitting phosphor substantially represented by MIII g Eu h Si i Al j O k N 1 and trivalent cerium activated silicate green light emitting phosphor substantially represented by MIV 3 (MV 1-m Ce m ) 2 (SiO 4 ) 3 , and forward current applied to the light emitting element (2) is 25 mA or more. The light emitting apparatus with excellent life property, high reliability, efficiency and color rendition or high color gamut is provided. |