| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e70c0aeade92d7571d955d3b90ea06e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate |
2008-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c1d8c7315a837031563f4c1f7a3e2d6 |
| publicationDate |
2009-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2135294-A1 |
| titleOfInvention |
Thick film conductive composition and processes for use in the manufacture of semiconductor device |
| abstract |
The present invention is directed to a thick film conductive composition comprising: a) electrically conductive silver powder; b) ZnO powder; c) lead-free glass frits wherein based on total glass frits: Bi2O3: >5 mol%, B2O3: < 15 mol%, BaO: < 5 mol%, SrO: < 5 mol%, Al2O3: < 5 mol%; and d) organic medium, wherein (the content of ZnO / the content of the silver powder) x 100 is more than 2.5. |
| priorityDate |
2007-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |