| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2009-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_059871249fb9c02c631b4ad60ce3ecce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7ef036be8bec822dbbbfd24930a6c7c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8547b5de250b0505a4158fc1b9523776 |
| publicationDate |
2009-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2113938-A2 |
| titleOfInvention |
Group III nitride crystal and method for surface treatment thereof, Group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof |
| abstract |
A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal (1) using a hard abrasive grain (16) with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III nitride crystal (1) using a polishing solution (27) without containing abrasive grain, and the polishing solution (27) without containing abrasive grain has a pH of not less than 1 and not more than 6, or not less than 8.5 and not more than 14. Accordingly, the method for surface treatment of a group III nitride crystal can be provided according to which hard abrasive grains remaining at the lapped crystal can be removed to reduce impurities at the crystal surface. |
| priorityDate |
2008-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |