| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2007-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6dedb2bfd6b34c51908678e6ad554b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2838fc09ea582153a385e13a45062a7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61420cdd2c01ba119556edc46011abef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f0d7b774dce0fe1491977f4b9add11b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a2cf3f9243b10468d4363d9faa4776a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc6a19055ab71bfe7066169b927fae8b |
| publicationDate |
2009-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2085823-A1 |
| titleOfInvention |
Method for manufacturing semiconductor device using quadruple-layer laminate |
| abstract |
There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A). |
| priorityDate |
2006-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |