| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-151 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate |
2007-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47771c3bef0b7363830c38b804ca850b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0949dd247f7ee92a161db46f57891889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0abf02467de5f5ba7f8fac15125aaa4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_558d93c84aa5b0b7229147f748bb1bb9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8ac25d928ff0d4fe424f7eac4ad74bd |
| publicationDate |
2009-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2063471-A1 |
| titleOfInvention |
Organic field effect transistor |
| abstract |
An organic field-effect transistor has a gate insulating layer (4) comprising a cured epoxy resin. The epoxy resin has a lower concentration of trapping centres (8) compared with a conventional epoxy resin in which trapping centres are provided by hydroxyl (OH) groups. The lower concentration of trapping centres can be achieved by reducing the number of hydroxyl groups throughout the layer and/or by reducing the number of hydroxyl groups in a surface region (9). |
| priorityDate |
2007-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |