| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a193bbf98a93a588ed793bc48b9a7d3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cef1f43aa7ea51e6a592082d9f2a3103 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-202 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-881
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2007-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f64c08350f94ca8d98c14008af063c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42d6876139d3f875fb5308a39d6488bc |
| publicationDate |
2009-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2062307-A2 |
| titleOfInvention |
Method for controlled formation of the resistive switching material in a resistive switching device and devices obtained thereof |
| abstract |
The present disclosure provides a method for controlled formation of the resistive switching layer in a resistive switching device. The method comprises providing a substrate (2) comprising the bottom electrode (10), providing on the substrate a dielectric layer (4) comprising a recess (7) containing the metal for forming the resistive layer (11), providing on the substrate a dielectric layer (5) comprising an opening (8) exposing the metal of the recess, and forming the resistive layer in the recess and in the opening. |
| priorityDate |
2006-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |