http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2049705-A2

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filingDate 2007-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4aef19d55ed1e46892543dadeb1b0e92
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publicationDate 2009-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2049705-A2
titleOfInvention Improved methods for atomic layer deposition
abstract Improved methods for performing atomic layer deposition (ALD) are described. These improved methods provide more complete saturation of the surface reactive sites and provides more complete monolayer surface coverage at each half-cycle of the ALD process. In one embodiment, operating parameters are fixed for a given solvent based precursor. In another embodiment, one operating parameter, e.g. chamber pressure is altered during the precursor deposition to assure full surface saturation.
priorityDate 2006-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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