| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2008-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa9ed4faf7c193fcba07ee84fba606d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f7cab781b277b5ae8c195ede3357ea4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c63c0bd756fa180af4547ab7d7d03dc7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c84991025f0fcfd4cd141fce785fcae1 |
| publicationDate |
2009-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2043139-A2 |
| titleOfInvention |
Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls |
| abstract |
High aspect ratio contact openings are etched while preventing bowing or bending of the etch profile by forming a highly conductive thin film on the side wall of each contact opening. The conductivity of the thin film on the side wall is enhanced by ion bombardment carried out periodically during the etch process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2056341-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2056341-A3 |
| priorityDate |
2007-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |