| abstract |
To provide a polishing compound which can satisfy both high removal rate of an object to be polished and excellent property to eliminate the difference in level, and to provide a polishing method which can polish a wiring metal fast while suppressing increase of a wiring metal resistance and is excellent in the property to eliminate the difference in level. n A polishing compound which comprises abrasive particles, an oxidizing agent, ammonium ions, polyvalent carboxylate ions, at least one chelating agent selected from the group consisting of pentaethylenehexamine, triethylenetetramine and tetraethylenepentamine, and an aqueous medium. Further, a polishing method of polishing a wiring metal 3 by using the polishing compound, after providing a wiring trench 2 on a resin substrate 1 and embedding the wiring metal 3 in the wiring trench 2. |