http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2017878-A2
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate | 2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54da297c75cf50634cd2b78feb9a1272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fd2133cfc4bab2ebcab74f289488432 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd44b6a5ee8133bc567dee4402c72c87 |
publicationDate | 2009-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-2017878-A2 |
titleOfInvention | Method for etching using advanced patterning film in capacitive coupling high frequency plasma dielectric etch chamber |
abstract | A method for etching wafers using advanced patterning film (APF) to reduce bowing and improve bottom-to-top ratios includes providing a wafer having an APF layer into a processing chamber, wherein the processing chamber is configured with a power source operating at about 162 MHz, supplying a process gas into the chamber, applying a source power using the 162 MHz power source, and applying a bias power to the wafer. The process gas comprises hydrogen gas (H2), nitrogen gas (N2), and carbon monoxide gas (CO). The ratio of H2: N2 is about 1:1. Additionally, the wafer temperature is adjusted to improve the etching characteristics. |
priorityDate | 2007-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.