| abstract |
A copper indium diselenide (CIS)-based photovoltaic device includes a CIS- based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate formed from a silicone composition. The substrate, because it is formed from the silicone composition, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500 °C to obtain maximum efficiency of the device. |